IRF3205PBF TO-220 N-ch 98A 55V Power MOSFET

Product Description

Datasheet: https://www.infineon.com/dgdl/irf3205pbf.pdf?fileId=5546d462533600a4015355def244190a

The pin configuration of IRF3205 is as follow:

• Pin 1 is used as gate terminal represented by G and the main task of this pin is to make sure that the flow of current between the source as well as drain channel doesn’t exceed the maximum value.
• Pin 2 is used as drain terminal and is represented by D and electron emission takes place at this terminal.
• Pin 3 is used as source terminal and is represented as S and is used to collect the emitted terminal from the drain.

FEATURES & SPECIFICATIONS OF IRF3205

• The value of VGS i.e. continuous drain current is 110 ampere when 10 volts are applied.
• The amount of pulsed drain current is 390 amperes.
• The power dissipation at the temperature of 25°C is 200 watts.
• The value of linear de-rating factor is 1.3 W/°C.
• The value of gate to source voltage is ± 20 V.
• The avalanche current in this power MOSFET is 62 amperes.
• The amount of repetitive avalanche energy is 0.02 Jdv/dt.
• The value of peak diode recovery i.e. dv/dt is 5 V/ns.
• The soldering temperature as well as operating junction for the time period of 10 seconds is 300 if we assume the length to be 1.6 mm.
• The operating voltage is 175°C.
• Fast switching
• Advanced process technology.
• The package of IRF3205 is TO-220AB
• It is N channel type.
• The rise time value is 110 ns.
• It can be used by combining it with power switching circuits.
• The value of low on resistance is 8 mΩ
• The breakdown voltage of drain to source is 55 volts.